Method of making a FinFET device
US9245883B1 · kind B1 · utility
23Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2014 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Sep 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a fin-like field-effect transistor (FinFET) device is disclosed. The method includes forming a first gate stack and a second gate stack over different portions of a fin feature formed on a substrate, forming a first dielectric layer in a space between the first and second gat stacks, removing the first gate stack to form a first gate trench, therefore the first gate trench exposes a portion of the fin feature. The method also includes removing the exposed portion of the fin feature and forming an isolation feature in the first gate trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.