Structure for metal oxide semiconductor capacitor
US9245884B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2014 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Dec 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A design structure for a semiconductor structure is disclosed. The semiconductor structure can include a substrate, a set of semiconductor fins positioned on the substrate and positioned approximately parallel lengthwise to one another, a first gate layer and a second gate layer deposited on the substrate and on the set of semiconductor fins approximately perpendicular lengthwise to the set of semiconductor fins. The semiconductor structure can include an interconnect layer deposited on the substrate and on the set of semiconductor fins approximately perpendicular lengthwise to the set of semiconductor fins. The interconnect layer can be positioned between the first gate layer and the second gate layer at a first interconnect distance from the first gate layer and a second interconnect distance from the second gate layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.