Profile control over a collector of a bipolar junction transistor
US9245951B1 · kind B1 · utility
17Cited by
17References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2014 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Sep 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/177
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Device structures and fabrication methods for a bipolar junction transistor. A layer is formed on a top surface of a substrate. A trench is formed in the layer and has a plurality of sidewalls with a width between an opposite pair of the sidewalls that varies with increasing distance from the top surface of the substrate. A collector pedestal of the bipolar junction transistor is formed in the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.