Method to induce strain in 3-D microfabricated structures
US9245953B2 · kind B2 · utility
6Cited by
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32Claims
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Key dates
| Filing date | Jan 15, 2015 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Jan 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic relaxation. The structures exhibit a preferred design range for increasing induced strain and uniformity of the strain over the fin height.
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