IGZO devices with composite channel layers and methods for forming the same
US9246013B2 · kind B2 · utility
21Cited by
1References
10Claims
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Key dates
| Filing date | Dec 18, 2013 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Jun 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments described herein provide indium-gallium-zinc oxide (IGZO) devices, such as IGZO thin-film transistors (TFTs), and methods for forming such devices. A substrate is provided. A gate electrode is formed above the substrate. An IGZO channel layer is formed above the gate electrode. The IGZO channel layer has a first sub-layer including c-IGZO and a second sub-layer including a-IGZO. A source electrode and a drain electrode are formed above the IGZO channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.