ReRAM cells with diffusion-resistant metal silicon oxide layers
US9246091B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 23, 2014 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Jul 23, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/828
Abstract
A metal silicon oxide barrier layer between a nitride electrode containing the same metal and an oxide variable-resistance layer in a ReRAM cell prevents the metal from diffusing into the variable-resistance layer and prevents oxygen from diffusing into and oxidizing the electrode. Compound oxides of the same metal and silicon with varying stoichiometries and metal/silicon ratios may optionally replace part or all of the variable-resistance layer, a defect-reservoir layer, or both. The metal nitride electrode may include a metal silicon nitride current-limiting portion. Optionally, all the layers sharing the common metal may be formed in-situ as part of a single unit process, such as atomic layer deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.