Method for manufacturing silicon single crystal wafer and electronic device
US9252025B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2012 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Dec 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to the present invention, there is provided a method for manufacturing a silicon single crystal wafer, wherein a first heat treatment for holding a silicon single crystal wafer in an oxygen containing atmosphere at a first heat treatment temperature for 1 to 60 seconds and cooling it to 800° C. or less at a temperature falling rate of 1 to 100° C./second by using a rapid heating/rapid cooling apparatus is performed to inwardly diffuse oxygen and form an oxygen concentration peak region near a surface of the silicon single crystal wafer, and then a second heat treatment is performed to agglomerate oxygen in the silicon single crystal wafer into the oxygen concentration peak region. As a result, it is possible to provide the method for manufacturing a silicon single crystal wafer that enables forming an excellent gettering layer close to a device forming region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.