Buried trench isolation in integrated circuits
US9252026B2 · kind B2 · utility
0Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2014 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Mar 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system and method for providing electrical isolation between closely spaced devices in a high density integrated circuit (IC) are disclosed herein. An integrated circuit (IC) comprising a substrate, a first device, a second device, and a buried trench in the substrate and a method of fabricating the same are also discussed. The buried trench is positioned between first and second devices and may be filled with dielectric material. Alternatively, the buried trench contains air. A method of using Hydrogen annealing to create the buried trench is disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.