Method for top oxide rounding with protection of patterned features
US9252051B1 · kind B1 · utility
1Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Nov 13, 2014 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Nov 13, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After completely etching through a material stack comprising an oxide hard mask layer and an underlying interlevel dielectric (ILD) layer formed on a substrate to provide at least one opening, top corners of the at least one opening are rounded by performing a plasma etch employing a combination of an etching gas and a deposition gas comprising a hydrofluorocarbon compound. The hydrofluorocarbon compound forms a hydrofluorocarbon polymer layer on sidewalls of the at least one opening and helps to preserve the profile of the at least one opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.