Laser and plasma etch wafer dicing with partial pre-curing of UV release dicing tape for film frame wafer application
US9252057B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2013 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Apr 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68381
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and systems of laser and plasma etch wafer dicing using UV-curable adhesive films. A method includes forming a mask covering ICs formed on the wafer. The semiconductor wafer is coupled to a film frame by a UV-curable adhesive film. A pre-cure of the UV-curable adhesive film cures a peripheral portion of the adhesive extending beyond an edge of the wafer to improve the exposed adhesive material's resistance to plasma etch and reduce hydrocarbon redeposition within the etch chamber. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is plasma etched through the gaps in the patterned mask to singulate the ICs. A center portion of the UV-curable adhesive is then cured and the singulated ICs detached from the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.