Patent · US Active

Method of word-line formation by semi-damascene process with thin protective conductor layer

US9252153B1 · kind B1 · utility

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8Claims

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Assignee

MACRONIX INTERNATIONAL CO., LTD. · TW

Inventors

Cheng-Yi Lung · Hsinchu, TW
An Chyi Wei · Hsinchu, TW
Ta-Hung Yang · Hsinchu, TW

Key dates

Filing date	Sep 22, 2014
Grant date	Feb 2, 2016
Priority date	—
Expiry date	Sep 22, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semi-damascene method is described for fabricating wordlines without stringers while maintaining critical cell dimensions when wordline pitch is less than 40 nm. A thin conducting layer protects a storage layer during manufacture, the thin conducting layer then making contact with filled-in conducting material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.