Spacer-last replacement metal gate flow and device
US9252245B1 · kind B1 · utility
10Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2014 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Sep 5, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A methodology for spacer-last replacement metal gate (RMG) flow that exhibits reduced variability, and the resulting device are disclosed. Embodiments may include forming a dummy gate stack comprising a dummy nitride portion on a dummy oxide portion on a substrate, forming source/drain regions in the substrate at opposite sides of the dummy gate stack, depositing an insulating material over the source/drain regions, coplanar with the dummy gate stack, and replacing the dummy gate stack with a metal gate stack and spacers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.