Tunnel effect transistor

US9252269B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Costin Anghel · Vanves, FR
• Cyrille Le Royer · Grenoble, FR
• Adam Makosiej · Grenoble, FR

Key dates

• Filing date: Mar 6, 2014
• Grant date: Feb 2, 2016
• Expiry date: Mar 6, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/258

Abstract

A tunnel effect transistor includes a channel made of an intrinsic semiconductor material; source and drain extension regions on either side of the channel, the source extension region being made of a semiconductor material doped according to a first type of doping P or N and the drain extension region being made of a semiconductor material doped according to a second type of doping opposite to said first type of doping; source and drain conductive regions respectively in contact with the source and drain extension regions; a gate structure including a gate dielectric layer in contact with the channel and a gate area arranged such that the gate dielectric layer is arranged between the gate area and the channel; and an area doped according to the first type of doping inserted between the channel and the drain extension region.