Adam Makosiej
15Patents
2h-index
15Co-inventors
43Inventor score
Filing activity: Oct 18, 2012 → May 12, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9542996B2 | Device with SRAM memory cells including means for polarizing wells of memory cell transistors | Electricity | 4 | Active |
| US9508434B2 | Programmable-resistance non-volatile memory | Physics | 4 | Active |
| US9252269B2 | Tunnel effect transistor | Electricity | 2 | Active |
| US9679649B2 | Reconfigurable cam | Physics | 1 | Active |
| US9685222B2 | Memory cell with read transistors of the TFET and MOSFET type to reduce leakage current | Physics | 1 | Active |
| US10079056B2 | SRAM memory bit cell comprising n-TFET and p-TFET | Physics | 1 | Active |
| US10910040B2 | Memory circuit | Physics | 1 | Active |
| US10110203B2 | Tri-state inverter, D latch and master-slave flip-flop comprising TFETs | Electricity | 0 | Active |
| US10923191B2 | 3D SRAM/ROM with several superimposed layers and reconfigurable by transistor rear biasing | Physics | 0 | Active |
| US10685700B2 | PVT detection circuit | Physics | 0 | Active |
| US10748604B2 | SRAM memory with improved end-of-read triggering | Physics | 0 | Active |
| US9099993B2 | Circuit for reverse biasing inverters for reducing the power consumption of an SRAM memory | Physics | 0 | Active |
| US12374374B2 | Precharge circuitry for memory | Physics | 0 | Active |
| US10861520B2 | SRAM/ROM memory reconfigurable by supply connections | Physics | 0 | Active |
| US10839906B2 | In memory computing (IMC) memory circuit having 6T cells | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.