Semiconductor light emitting element and light emitting device

US9252333B2 · kind B2 · utility

Assignee

• TOYODA GOSEI CO., LTD. · JP

Inventors

• Honglin Wang · Hikone, JP
• Hironao Shinohara · Ichihara, JP
• Eisuke Yokoyama

Key dates

• Filing date: Oct 24, 2013
• Grant date: Feb 2, 2016
• Expiry date: Oct 24, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/84

Abstract

A semiconductor light emitting element (1) includes; an n-type semiconductor layer (120), a light emitting layer (130), a p-type semiconductor layer (140), a p-side power supply portion (150), and an n-side power supply portion (160) that includes an n-side power supply electrode (162), an n-side auxiliary electrode (163) and n-side connective electrodes (164). The n-side power supply electrode (162) and auxiliary electrode (163) are provided in the inner side beyond the p-type semiconductor layer (140) viewed from the light emitting layer (130). On the p-type semiconductor layer (140), a power supply insulating layer (170) transparent to light from the light emitting layer (130) is provided, and portions at lower side of the n-side power supply electrode (162) and auxiliary electrode (163) are set to have a thickness with which the light is easily reflected, and other portions are set to have a thickness with which the light is easily transmitted.