Thin film encapsulation-thin ultra high barrier layer for OLED application

US9252392B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Bhaskar Kumar · Santa Clara, US
• Dieter Haas · Bruchköbel, DE

Key dates

• Filing date: Mar 10, 2014
• Grant date: Feb 2, 2016
• Expiry date: Apr 14, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K50/8445

Abstract

A method and apparatus for depositing a multilayer barrier structure is disclosed herein. In one embodiment, a thin barrier layer formed over an organic semiconductor includes a non-conformal organic layer, an inorganic layer formed over the non-conformal organic layer, a metallic layer formed over the inorganic layer and a second organic layer formed over the metallic layer. In another embodiment, a method of depositing a barrier layer includes forming an organic semiconductor device over the exposed surface of a substrate, depositing an inorganic layer using CVD, depositing a metallic layer comprising one or more metal oxide or metal nitride layers over the inorganic layer by ALD, each of the metal oxide or metal nitride layers comprising a metal, wherein the metal is selected from the group consisting of aluminum, hafnium, titanium, zirconium, silicon or combinations thereof and depositing an organic layer over the metallic layer.