Method of performing optical proximity correction for preparing mask projected onto wafer by photolithography
US9256120B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2014 |
| Grant date | Feb 9, 2016 |
| Priority date | — |
| Expiry date | Dec 4, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of performing optical proximity correction for preparing a mask projected onto a wafer by photolithography includes the following steps. An integrated circuit layout design including a first feature and a second feature is obtained, wherein the first feature overlaps a first boundary of two structures in the wafer. An edge of the first feature close to the second feature pertaining to a specific trend section of an experimental chart having trend sections is recognized. An optical proximity correction value is evaluated for the edge through a computer system according to a rule corresponding to the specific trend section. The layout design is compensated with the optical proximity correction value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.