Semiconductor device and formation thereof
US9257559B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2014 |
| Grant date | Feb 9, 2016 |
| Priority date | — |
| Expiry date | Feb 1, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/797
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method of formation are provided herein. A semiconductor device includes a fin having a first wall extending along a first plane, the fin including a doped region defining a first furrow on a first side of the first plane. A dielectric is disposed within the first furrow, such that the dielectric is in contact with the first furrow between a first end of the dielectric and a second end of the dielectric. The first end is separated a first distance from the first plane. The dielectric disposed within the furrow increases the isolation of a channel portion of adjacent fins, and thus decreases current leakage of a FinFet, as compared to a FinFet including fins that do not include a dielectric disposed within a furrow.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.