Method for selective growth of highly doped group IV—Sn semiconductor materials

US9263263B2 · kind B2 · utility

Assignee

• IMEC · BE

Inventors

• Andriy Hikavyy · Leuven, BE
• Benjamin Vincent · San Francisco, US
• Roger Loo · Leuven, BE

Key dates

• Filing date: Jul 17, 2013
• Grant date: Feb 16, 2016
• Expiry date: Jul 18, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02636
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Disclosed are methods for selective deposition of doped Group IV-Sn materials. In some embodiments, the method includes providing a patterned substrate comprising at least a first region and a second region, where the first region includes an exposed first semiconductor material and the second region includes an exposed insulator material, and performing at least two cycles of a grow-etch cyclic process. Each cycle includes depositing a doped Group IV-Tin (Sn) layer, where depositing the doped Group IV-Sn layer includes providing a Group IV precursor, a Sn precursor, and a dopant precursor, and using an etch gas to etch back the deposited doped Group IV-Sn layer.