Group III nitride articles and methods for making same
US9263266B2 · kind B2 · utility
1Cited by
47References
22Claims
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Key dates
| Filing date | Jun 15, 2015 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Jun 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.