Method of forming buried word line structure
US9263317B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2014 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Apr 9, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/63
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a buried word line structure is provided. A first mask layer, an interlayer and a second mask layer are sequentially formed on a substrate, wherein the second mask layer has a plurality of mask patterns and a plurality of gaps arranged alternately, and the gaps includes first gaps and second gaps arranged alternately. A dielectric pattern is formed in each first gap and spacers are simultaneously formed on sidewalls of each second gap, wherein a first trench is formed between the adjacent spacers and exposes a portion of the first mask layer. The mask patterns are removed to form second trenches. An etching process is performed by using the dielectric patterns and the spacers as a mask, so that the first trenches are deepened to the substrate and the second trenches are deepened to the first mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.