Thermal interface material with support structure
US9263364B2 · kind B2 · utility
0Cited by
3References
20Claims
0Family size
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Key dates
| Filing date | Aug 23, 2011 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Jul 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various semiconductor chip thermal interface material methods and apparatus are disclosed. In one aspect, a method of establishing thermal contact between a first semiconductor chip and a heat spreader is provided. The method includes placing a thermal interface material layer containing a support structure on the first semiconductor chip. The heat spreader is positioned proximate the thermal interface material layer. The thermal interface material layer is reflowed to establish thermal contact with both the first semiconductor chip and the heat spreader.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.