Through substrate via structures and methods of forming the same
US9263382B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2014 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Jul 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure includes a substrate, and an interconnect structure over the substrate. The structure further includes a through-substrate-via (TSV) extending through the interconnect structure and into the substrate, the TSV comprising a conductive material layer. The structure further includes a dielectric layer having a first portion over the interconnect structure and a second portion within the TSV, wherein the first portion and the second portion comprise a same material. The conductive material layer includes a first section separated from substrate by the second portion of the dielectric layer. The conductive material layer further includes a second section over a top surface of the second portion of the dielectric layer. The conductive material layer further includes a third section over the second section, wherein the third section has a width greater than a width of the second section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.