Semiconductor device and method for fabricating the same
US9263392B1 · kind B1 · utility
14Cited by
2References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2014 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Oct 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a metal gate thereon and an interlayer dielectric (ILD) layer around the metal gate; removing part of the metal gate to form a recess; and depositing a mask layer in the recess and on the ILD layer while forming a void in the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.