Methods of forming enhanced mobility channel regions on 3D semiconductor devices, and devices comprising same
US9263585B2 · kind B2 · utility
4Cited by
10References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2012 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Oct 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/791
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein are various methods of forming stressed channel regions on 3D semiconductor devices, such as, for example, FinFET semiconductor devices, through use of epitaxially formed materials. In one example, the method includes forming a plurality of spaced-apart trenches in a semiconducting substrate, wherein the trenches define at least a portion of a fin for the device, and performing an epitaxial deposition process to form an epitaxially formed stress-inducing material in the trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.