Patent · US Active

Memory systems and memory programming methods

US9269432B2 · kind B2 · utility

17Cited by
8References
34Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 9, 2014
Grant dateFeb 23, 2016
Priority date
Expiry dateJan 9, 2034

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2213/79
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Memory systems and memory programming methods are described. According to one arrangement, a memory system includes a memory array comprising a plurality of memory cells individually configured to have a plurality of different memory states, access circuitry configured to apply signals to the memory cells to program the memory cells to the different memory states, and a controller to configured to control the access circuitry to apply a first of the signals to one of the memory cells to program the one memory cell from a first memory state to a second memory state different than the first memory state, to determine that the one memory cell failed to place into the second memory state as a result of the application of the first signal, and to control the access circuitry to apply a second signal to the one memory cell to program the one memory cell from the first memory state to the second memory state as a result of the determination, wherein the first and second signals have a different electrical characteristic.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.