Contact on a heterogeneous semiconductor substrate
US9269570B2 · kind B2 · utility
3Cited by
2References
17Claims
0Family size
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Key dates
| Filing date | Apr 11, 2013 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Apr 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for producing a microelectronic device with plural zones made of a metal and semiconductor compound, from semiconductor zones made of different semiconductor materials, and on which a thin semiconductor layer is formed prior to the deposition of a metal layer so as to lower the nucleation barrier of the semiconductor zones when reacting with the metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.