Cluster ion implantation of arsenic and phosphorus
US9269582B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Mar 22, 2012 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Oct 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An ion implantation method, in which a dopant source composition is ionized to form dopant ions, and the dopant ions are implanted in a substrate. The dopant source composition includes cluster phosphorus or cluster arsenic compounds, for achieving P- and/or As-doping, in the production of doped articles of manufacture, e.g., silicon wafers or precursor structures for manufacturing microelectronic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.