Patent · US Active

Spacer formation

US9269590B2 · kind B2 · utility

180Cited by

551References

15Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Olivier Luere · Sunnyvale, US
Sean S. Kang · San Ramon, US
Srinivas D. Nemani · Sunnyvale, US

Key dates

Filing date	Apr 7, 2014
Grant date	Feb 23, 2016
Priority date	—
Expiry date	Apr 7, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/32139
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Embodiments of the present invention pertain to methods of forming more symmetric spacers which may be used for self-aligned multi-patterning processes. A conformal spacer layer of spacer material is formed over mandrels patterned near the optical resolution of a photolithography system using a high-resolution photomask. A carbon-containing layer is further formed over the conformal spacer layer. The carbon-containing layer is anisotropically etched to expose the high points of the conformal spacer layer while retaining carbon side panels. The conformal spacer layer may then be etched to form spacers without the traditional skewing of the profile towards one side or the other.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.