Methods of removing portions of at least one fin structure so as to form isolation regions when forming FinFET semiconductor devices
US9269628B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 4, 2014 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Dec 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative method disclosed herein includes, among other things, forming a plurality of first and second fins that are made of different semiconductor materials that may be selectively etched relative to one another, forming a first insulating material between the plurality of first and second fins, forming an etch mask above the first and second fins that exposes a portion of at least one first fin and exposes a portion of at least one second fin, performing an etching process to remove the exposed portion of the at least one first fin selectively to the first insulating material and the exposed portion of the at least one second fin so as to thereby define at least one removed fin cavity in the first insulating material, removing the patterned etch mask, and forming a second insulating material in the at least one removed fin cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.