Method of detecting and measuring contact alignment shift relative to gate structures in a semicondcutor device
US9269639B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2013 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Sep 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of detecting and measuring the alignment shift of the contacts relative to the gate structures. The method comprises: designing a test model array having different test model regions on the substrate; forming second conductivity type doped well regions, gate structures, and first conductivity type doped active regions in each of the test model regions; forming contacts in each of the test model region; scanning the test model array by an electron-beam inspector to obtain light-dark patterns of the contacts; and detecting and measuring the alignment shift of the contacts relative to the gate structures according to the light-dark patterns of the contacts and the critical dimensions of the transistors in the test model regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.