Semiconductor device and method for producing the same

US9269713B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Peter Irsigler · Ried im Innkreis, AT
• Franz Hirler · Isen, DE
• Hans-Joachim Schulze · Taufkirchen, DE

Key dates

• Filing date: Jun 4, 2013
• Grant date: Feb 23, 2016
• Expiry date: Aug 17, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/668

Abstract

A power semiconductor device comprises a first substrate that is highly doped with a first dopant type, the first substrate having a front face and a back face, the back face forming a backside of the device, a vertical p-type FET and a vertical n-type FET provided laterally adjacent to each other on the front face of the first substrate, wherein one of the FETs has a first drift zone with a complementary doping to the first dopant of the first substrate, and wherein the p-type FET and the n-type FET share the first substrate as a common backside, and wherein a region between the first drift zone and the first substrate comprises a highly conductive structure providing a low ohmic connection between the first drift zone and the first substrate. Further, a method for producing such a device is provided.