Patent · US Active

Self-aligned interconnection for integrated circuits

US9269747B2 · kind B2 · utility

1Cited by

7References

7Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Fabio Pellizzer · Boise, US
Antonino Rigano · Pioltello, IT
Roberto Somaschini · Vimercate, IT

Key dates

Filing date	Aug 23, 2012
Grant date	Feb 23, 2016
Priority date	—
Expiry date	Jan 12, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Methods and structures provide horizontal conductive lines of fine pitch and self-aligned contacts extending from them, where the contacts have at least one dimension with a more relaxed pitch. Buried hard mask materials permit self-alignment of the lines and contacts without a critical mask, such as for word-line electrode lines and word-line contacts in a memory device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.