Method of forming a high electron mobility semiconductor device and structure therefor
US9269789B2 · kind B2 · utility
2Cited by
0References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 18, 2014 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Feb 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/258
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a method of forming a semiconductor device can comprise; forming a HEM device on a semiconductor substrate. The semiconductor substrate provides a current carrying electrode for the semiconductor device and one or more internal conductor structures provide a vertical current path between the semiconductor substrate and regions of the HEM device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.