Methods for forming protection layers on sidewalls of contact etch stop layers

US9269809B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Kai Frohberg · Meißen, DE
• Marco Lepper · Dresden, DE
• Katrin Reiche · Goltzscha, DE

Key dates

• Filing date: Feb 20, 2014
• Grant date: Feb 23, 2016
• Expiry date: Feb 20, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

When forming semiconductor devices with contact plugs comprising protection layers formed on sidewalls of etch stop layers to reduce the risk of shorts, the protection layers may be formed by performing a sputter process to remove material from a contact region and redeposit the removed material on the sidewalls of the etch stop layers.