Engineered substrates for semiconductor devices and associated systems and methods

US9269858B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Martin F. Schubert · Mountain View, US
• Cem Basceri · Boise, US
• Vladimir Odnoblyudov · Danville, US
• Casey Kurth · Eagle, US
• Thomas Gehrke · Carrboro, US

Key dates

• Filing date: Aug 31, 2011
• Grant date: Feb 23, 2016
• Expiry date: Jul 2, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/841

Abstract

Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.