Low temperature deposition for silicon-based conductive film

US9269898B2 · kind B2 · utility

Assignee

• CrossBar, Inc. · US

Inventors

• Steven Patrick Maxwell · Sunnyvale, US
• Kuk-Hwan Kim · Milpitas, US
• Sung Hyun Jo · Sunnyvale, US

Key dates

• Filing date: Jul 25, 2014
• Grant date: Feb 23, 2016
• Expiry date: Jul 25, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/881

Abstract

Providing for low temperature deposition of silicon-based electrical conductor for solid state memory is described herein. In various disclosed embodiments, the silicon-based conductor can form an electrode of a memory cell, an interconnect between conductive components of an electronic device, a conductive via, a wire, and so forth. Moreover, the silicon-based electrical conductor can be formed as part of a monolithic process incorporating complementary metal oxide semiconductor (CMOS) device fabrication. In particular embodiments, the silicon-based electrical conductor can be a p-type silicon germanium compound, that is activated upon deposition at temperatures compatible with CMOS device fabrication.