Electronic device, memory cell, and method of flowing electric current
US9269899B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2015 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Feb 5, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electronic device includes two conductive electrodes. A first current path extends from one of the electrodes to the other and has a dominant thermally activated conduction activation energy of 0.5 eV to 3.0 eV. A second current path extends from the one electrode to the other and is circuit-parallel the first current path. The second current path exhibits a minimum 100-times increase in electrical conductivity for increasing temperature within a temperature range of no more than 50° C. between 300° C. and 800° C. and exhibits a minimum 100-times decrease in electrical conductivity for decreasing temperature within the 50° C. temperature range. Other embodiments are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.