Selective titanium nitride etch
US9275834B1 · kind B1 · utility
519Cited by
4References
15Claims
0Family size
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Key dates
| Filing date | Feb 20, 2015 |
| Grant date | Mar 1, 2016 |
| Priority date | — |
| Expiry date | Feb 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of removing titanium nitride is described. The silicon nitride resides on a patterned substrate. The titanium nitride is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a fluorine-containing precursor, a nitrogen-and-hydrogen-containing precursor and an oxygen-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.