Method for fabricating semiconductor device
US9275904B2 · kind B2 · utility
2Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2009 |
| Grant date | Mar 1, 2016 |
| Priority date | — |
| Expiry date | Oct 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device, including forming gate patterns over a substrate, forming conductive layer covering top and sidewalls of each gate pattern, forming a metal layer for a silicidation process over the conductive layer, and silicifying the conductive layer and the gate patterns using the metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.