Method for increasing a surface area of epitaxial structures in a mixed N/P type fin semiconductor structure by forming multiple epitaxial heads
US9275906B2 · kind B2 · utility
1Cited by
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8Claims
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Key dates
| Filing date | May 1, 2014 |
| Grant date | Mar 1, 2016 |
| Priority date | — |
| Expiry date | May 1, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02538
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A non-planar semiconductor structure includes mixed n-and-p type raised semiconductor structures, e.g., fins, having epitaxial structures grown on top surfaces thereof, for example, epitaxial silicon and silicon germanium, naturally growing into a diamond shape. The surface area of the epitaxial structures is increased by removing portion(s) thereof, masking each type as the other type is grown and then subsequently modified by the removal. The removal may create multi-head (e.g., dual-head) epitaxial structures, together with the neck of the respective raised structure resembling a Y-shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.