Patent · US Active

Semiconductor structures including stacks of indium gallium nitride layers

US9276070B2 · kind B2 · utility

0Cited by
6References
19Claims
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Key dates

Filing dateApr 10, 2014
Grant dateMar 1, 2016
Priority date—
Expiry dateApr 10, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/811
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Methods of forming ternary III-nitride materials include epitaxially growing ternary III-nitride material on a substrate in a chamber. The epitaxial growth includes providing a precursor gas mixture within the chamber that includes a relatively high ratio of a partial pressure of a nitrogen precursor to a partial pressure of one or more Group III precursors in the chamber. Due at least in part to the relatively high ratio, a layer of ternary III-nitride material may be grown to a high final thickness with small V-pit defects therein. Semiconductor structures including such ternary III-nitride material layers are fabricated using such methods.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.