Tunnel transistor with high current by bipolar amplification

US9276102B2 · kind B2 · utility

Assignees

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE · FR

Inventors

• Cyrille Le Royer · Grenoble, FR
• Sorin Cristoloveanu · Seyssinet-Pariset, FR
• Jing Wan · Malta, US
• Alexander Zaslavsky · Netanya, IL

Key dates

• Filing date: Jul 8, 2013
• Grant date: Mar 1, 2016
• Expiry date: Jul 8, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

A tunnel-effect transistor the drain region of which includes a first zone doped with a doping of a first type, and a second zone doped with a doping of a second type forming a junction with the first zone.