Patent · US Active

Semiconductor light emitting element and method of manufacturing semiconductor light emitting element

US9276170B2 · kind B2 · utility

0Cited by
1References
4Claims
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Key dates

Filing dateOct 22, 2013
Grant dateMar 1, 2016
Priority date
Expiry dateOct 22, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/833

Abstract

A semiconductor light emitting element includes a laminated semiconductor layer including a light emitting layer that emits light by passing a current, the laminated semiconductor layer has a lower semiconductor bottom surface, a semiconductor side surface that rises from an edge of the lower semiconductor bottom surface upwardly and outwardly of the laminated semiconductor layer, and a lower semiconductor top surface that faces upward by extending inwardly of the laminated semiconductor layer from an upper edge of the semiconductor side surface, an edge of the lower semiconductor top surface includes first and second linear portions extending linearly and plural connecting portions connecting the first and second linear portions, and, when viewed from a direction perpendicular to the lower semiconductor top surface, each connecting portion is positioned inside a point of intersection of extended lines of the first and second linear portions connected to the connecting portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.