Hybridized oxide capping layer for perpendicular magnetic anisotropy
US9276201B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2015 |
| Grant date | Mar 1, 2016 |
| Priority date | — |
| Expiry date | Sep 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of forming a hybrid oxide capping layer (HOCL) is disclosed and used in a magnetic tunnel junction to enhance thermal stability and perpendicular magnetic anisotropy in an adjoining free layer. The HOCL has a lower interface oxide layer and one or more transition metal oxide layers wherein each of the metal layers selected to form a transition metal oxide has an absolute value of free energy of oxide formation less than that of the metal used to make the interface oxide layer. One or more of the HOCL layers is under oxidized. Oxygen from one or more transition metal oxide layers preferably migrates into the interface oxide layer during annealing to further oxidize the interface oxide. As a result, a less strenuous oxidation step is required to initially oxidize the lower HOCL layer and minimizes oxidative damage to the free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.