Ru-Ying Tong
188Patents
30h-index
53Co-inventors
93Inventor score
Filing activity: Sep 30, 1999 → Jul 27, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7449345B2 | Capping structure for enhancing dR/R of the MTJ device | Electricity | 133 | Expired |
| US6292336A | Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient | Physics | 96 | Expired |
| US8852760B2 | Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer | Emerging Cross-Sectional Technologies | 94 | Active |
| US6466418B1 | Bottom spin valves with continuous spacer exchange (or hard) bias | Emerging Cross-Sectional Technologies | 90 | Expired |
| US7948044B2 | Low switching current MTJ element for ultra-high STT-RAM and a method for making the same | Emerging Cross-Sectional Technologies | 89 | Active |
| US7750421B2 | High performance MTJ element for STT-RAM and method for making the same | Electricity | 88 | Active |
| US8823118B2 | Spin torque transfer magnetic tunnel junction fabricated with a composite tunneling barrier layer | Electricity | 82 | Active |
| US8860156B2 | Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM | Electricity | 78 | Active |
| US8592927B2 | Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications | Electricity | 67 | Active |
| US8470462B2 | Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions | Emerging Cross-Sectional Technologies | 65 | Active |
| US7480173B2 | Spin transfer MRAM device with novel magnetic free layer | Emerging Cross-Sectional Technologies | 57 | Active |
| US7595520B2 | Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same | Electricity | 56 | Active |
| US8138561B2 | Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM | Electricity | 53 | Active |
| US9466789B2 | Method of making a high thermal stability reference structure with out-of-plane anisotropy for magnetic device applications | Emerging Cross-Sectional Technologies | 52 | Active |
| US8749003B2 | High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same | Electricity | 51 | Active |
| US9490054B2 | Seed layer for multilayer magnetic materials | Electricity | 50 | Active |
| US8080432B2 | High performance MTJ element for STT-RAM and method for making the same | Electricity | 45 | Active |
| US9006704B2 | Magnetic element with improved out-of-plane anisotropy for spintronic applications | Electricity | 45 | Active |
| US7390529B2 | Free layer for CPP GMR having iron rich NiFe | Emerging Cross-Sectional Technologies | 43 | Expired |
| US8541855B2 | Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications | Physics | 41 | Active |
| US8184411B2 | MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application | Emerging Cross-Sectional Technologies | 40 | Active |
| US8981505B2 | Mg discontinuous insertion layer for improving MTJ shunt | Electricity | 37 | Active |
| US6960480B1 | Method of forming a magnetic tunneling junction (MTJ) MRAM device and a tunneling magnetoresistive (TMR) read head | Electricity | 36 | Expired |
| US6974708B2 | Oxidation structure/method to fabricate a high-performance magnetic tunneling junction MRAM | Electricity | 35 | Expired |
| US8987849B2 | Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications | Electricity | 35 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.