Reducing switching variation in magnetoresistive devices
US9281168B2 · kind B2 · utility
13Cited by
13References
21Claims
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Key dates
| Filing date | Jun 6, 2014 |
| Grant date | Mar 8, 2016 |
| Priority date | — |
| Expiry date | Jun 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The magnetic characteristics of a magnetoresistive device are improved by rendering magnetic debris non-magnetic during processing operations. Further improvement is realized by annealing the partially- or fully-formed device in the presence of a magnetic field in order to eliminate or stabilize magnetic micro-pinning sites or other magnetic abnormalities within the magnetoresistive stack for the device. Such improvement in magnetic characteristics decreases deviation in switching characteristics in arrays of such magnetoresistive devices such as those present in MRAMs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.