Method of manufacturing semiconductor device having metal gate
US9281201B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2013 |
| Grant date | Mar 8, 2016 |
| Priority date | — |
| Expiry date | Jan 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device having a metal gate is provided. A substrate having a first conductive type transistor and a second conductive type transistor formed thereon is provided. The first conductive type transistor has a first trench and the second conductive type transistor has a second trench. A first work function layer is formed in the first trench. A hardening process is performed for the first work function layer. A softening process is performed for a portion of the first work function layer. A pull back step is performed to remove the portion of the first work function layer. A second work function layer is formed in the second trench. A low resistive metal layer is formed in the first trench and the second trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.