Silicon dot formation by direct self-assembly method for flash memory
US9281203B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2013 |
| Grant date | Mar 8, 2016 |
| Priority date | — |
| Expiry date | Aug 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/69
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments of the present disclosure relate to a method that achieves a substantially uniform pattern of discrete storage elements comprising a substantially equal size within a memory cell. A copolymer solution comprising first and second polymer species is spin-coated onto a surface of a substrate and subjected to self-assembly into a phase-separated material comprising a regular pattern of micro-domains of the second polymer species within a polymer matrix comprising the first polymer species. The first or second polymer species is then removed resulting with a pattern of micro-domains or the polymer matrix with a pattern of holes, which may be utilized as a hard-mask to form a substantially identical pattern of discrete storage elements through an etch, ion implant technique, or a combination thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.