Semiconductor device and method of forming thermal interface material and heat spreader over semiconductor die
US9281228B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2011 |
| Grant date | Mar 8, 2016 |
| Priority date | — |
| Expiry date | Dec 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a semiconductor die mounted to a substrate. A recess is formed in a back surface of the semiconductor die to an edge of the semiconductor die with sidewalls on at least two sides of the semiconductor die. The sidewalls are formed by removing a portion of the back surface of the die, or by forming a barrier layer on at least two sides of the die. A channel can be formed in the back surface of the semiconductor die to contain the TIM. A TIM is formed in the recess. A heat spreader is mounted in the recess over the TIM with a down leg portion of the heat spreader thermally connected to the substrate. The sidewalls contain the TIM to maintain uniform coverage of the TIM between the heat spreader and back surface of the semiconductor die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.